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Proceedings Paper

Determination of the optical properties of II-VI compounds by spectroscopic ellipsometry
Author(s): Jan C. Jans; J. Petruzzello; J. M. Gaines; Diego J. Olego
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Paper Abstract

We have used spectroscopic ellipsometry to investigate the optical constants of undoped ZnSe, ZnSxSe1-x and Zn1-xCdxSe films grown by molecular beam epitaxy on GaAs. Ellipsometric modelling has allowed access to the above and below bandgap optical constants of the films. From the results given, shifts in bandgap are obtained with variation of S or Cd content. The use of a suitable dispersion equation has allowed the determination of the below-bandgap refractive index of the ZnSe films involved. Our results for the optical behavior of ZnSe films are in reasonable agreement with data obtained from a simplified model of interband transitions for single crystalline non-doped ZnSe bulk material available in recent literature.

Paper Details

Date Published: 19 November 1993
PDF: 7 pages
Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162742
Show Author Affiliations
Jan C. Jans, Philips Research Labs. (Netherlands)
J. Petruzzello, Philips Research Labs. (United States)
J. M. Gaines, Philips Research Labs. (United States)
Diego J. Olego, Philips Research Labs. (United States)

Published in SPIE Proceedings Vol. 1985:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II
Fabio Beltram; Erich Gornik, Editor(s)

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