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Proceedings Paper

Gallium nitride solid state ultraviolet detectors
Author(s): Larry F. Reitz
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Paper Abstract

This paper describes a series of new solid state ultraviolet detectors based on gallium nitride (GaN) material. Data will be presented on photoconductive type devices. These devices have a high responsivity between 200 to 362 nm with a sharp long wavelength cutoff at 362 nm. The photoconductive detectors have measured gains of over twenty thousand with proper doping. Data is given on two different detector configurations. Devices will be shown that can be utilized in the development of a focal plane array for UV imaging.

Paper Details

Date Published: 15 November 1993
PDF: 9 pages
Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); doi: 10.1117/12.161404
Show Author Affiliations
Larry F. Reitz, Air Force Wright Lab. (United States)

Published in SPIE Proceedings Vol. 1952:
Surveillance Technologies and Imaging Components
Sankaran Gowrinathan; C. Bruce Johnson; James F. Shanley, Editor(s)

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