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Proceedings Paper

Utilizing an optical cavity to increase the saturation level in a Schottky-barrier IR image sensor
Author(s): Akihito Tanabe; Shigeru Tohyama; Nobukazu Teranishi; Kazuo Konuma; Kouichi Masubuchi; Hiroaki Utsumi
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Paper Abstract

A precise evaluation of the photodiode storage capacitance in a platinum silicide Schottky- barrier IR image sensor with an optical cavity and in which an aluminum reflector is electrically grounded has revealed that the cavity capacitance between the aluminum reflector and the platinum silicide film, which is one of four components in the photodiode storage capacitance, is dominant. While this area of the photodiode has previously been investigated for its optical characteristics, the present study represents the first reported investigation on its electrical characteristics. In order to increase the saturation level of an image sensor, it is essential to increase the storage capacitance in its photodiode. The storage capacitance in the photodiode was shown to be increased not only by newly using but also by increasing the cavity capacitance. When the SiO2 film between the aluminum reflector and the platinum silicide film was replaced with SiN, total storage capacitance in the photodiode was successfully increased by a factor of 1.6, while the optical characteristics of the photodiode remained the same.

Paper Details

Date Published: 1 November 1993
PDF: 8 pages
Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); doi: 10.1117/12.160548
Show Author Affiliations
Akihito Tanabe, NEC Corp. (Japan)
Shigeru Tohyama, NEC Corp. (Japan)
Nobukazu Teranishi, NEC Corp. (Japan)
Kazuo Konuma, NEC Corp. (Japan)
Kouichi Masubuchi, NEC Corp. (Japan)
Hiroaki Utsumi, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2020:
Infrared Technology XIX
Bjorn F. Andresen; Freeman D. Shepherd, Editor(s)

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