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Proceedings Paper

Using computer simulation to understand detection enhancement in amorphous silicon structures
Author(s): Jingya Hou; Francisco A. Rubinelli; Stephen J. Fonash; Murray Bennett; Scott Wiedeman; Liyou Yang; James Newton
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Paper Abstract

Photodetection mechanisms can be quite complex in amorphous semiconductors due to the extensive trapping and electric field redistribution. When properly understood and exploited, this rich complexity can lead to enhanced photodetection. Using the AMPS computer model, we explore two such experimentally verified situations: one is an example of a primary photoconductivity type of effect which can yield quantum efficiencies greater than unity and the other is an example of a secondary photoconductivity type of effect which can yield gains of 103.

Paper Details

Date Published: 15 October 1993
PDF: 5 pages
Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); doi: 10.1117/12.158591
Show Author Affiliations
Jingya Hou, The Pennsylvania State Univ. (United States)
Francisco A. Rubinelli, The Pennsylvania State Univ. (United States)
Stephen J. Fonash, The Pennsylvania State Univ. (United States)
Murray Bennett, Solarex Corp. (United States)
Scott Wiedeman, Solarex Corp. (United States)
Liyou Yang, Solarex Corp. (United States)
James Newton, Solarex Corp. (United States)

Published in SPIE Proceedings Vol. 2022:
Photodetectors and Power Meters
Kenneth J. Kaufmann, Editor(s)

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