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Proceedings Paper

Strain related to oxygen agglomerates in processed Czochralski-grown silicon
Author(s): Andrzej Misiuk
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Paper Abstract

Oxygen atoms contained in Czochralski-grown silicon single crystal (Cz-Si) precipitate at higher temperatures and produce strain at the oxygen agglomerate/Si matrix boundary. The strain is manifested by the changes of lattice constant and x-ray anomalous transmission values and ought to be taken into account for Si used as the reference standard. Hydrostatic pressure treatment applied to the Cz-Si single crystals makes it possible to obtain better understanding of the strain related to oxygen agglomeration.

Paper Details

Date Published: 15 October 1993
PDF: 7 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156993
Show Author Affiliations
Andrzej Misiuk, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications
Jozef Zmija, Editor(s)

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