Proceedings Paper
Investigation of misfit dislocation profiles in ZnSe epilayer on GaAs substrate by Raman scattering| Format | Member Price | Non-Member Price |
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Paper Abstract
The detailed knowledge of strain and misfit dislocations profiles are important for the production and application of thin epilayer. It is shown that Raman scattering spectroscopy is needed to investigate these problems satisfactorily. In this paper we present Raman scattering measurements of the ZnSe epilayers with different thickness grown on GaAs substrate. The dependence of the frequency shift and the halfwidth of LO mode vs thickness of ZnSe epilayer is presented.
Paper Details
Date Published: 15 October 1993
PDF: 4 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156926
Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications
Jozef Zmija, Editor(s)
PDF: 4 pages
Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); doi: 10.1117/12.156926
Show Author Affiliations
Marek Kozielski, Poznan Technical Univ. (Poland)
Miroslaw Drozdowski, Poznan Technical Univ. (Poland)
Miroslaw Drozdowski, Poznan Technical Univ. (Poland)
P. Ziobrowski, Poznan Technical Univ. (Poland)
Waclaw Bala, N. Copernicus Univ. (Poland)
Waclaw Bala, N. Copernicus Univ. (Poland)
Published in SPIE Proceedings Vol. 1845:
Liquid and Solid State Crystals: Physics, Technology and Applications
Jozef Zmija, Editor(s)
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