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Proceedings Paper

Barrier layer metallization schemes for ULSI technologies
Author(s): Gurtej S. Sandhu; Scott Meikle; Sung Kim; Trung Tri Doan
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Paper Abstract

Deep sub micron high aspect ratio contacts used for ULSI require highly conformal Ti and TiN films for W contact plug technology. Collimated Ti sputtering has been shown to enhance the coverage of Ti at the bottom of the contacts which helps obtain low contact resistance. However, insufficient sidewall and bottom corner coverage results in failure of the TiN barrier during subsequent processing. Conformal CVD TiN with collimated Ti is proposed as a technology of choice for obtaining low resistance and highly reliable contacts for advanced ULSI applications.

Paper Details

Date Published: 15 September 1993
PDF: 6 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156530
Show Author Affiliations
Gurtej S. Sandhu, Micron Semiconductor, Inc. (United States)
Scott Meikle, Micron Semiconductor, Inc. (United States)
Sung Kim, Micron Semiconductor, Inc. (United States)
Trung Tri Doan, Micron Semiconductor, Inc. (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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