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Proceedings Paper

Properties of silicon oxide deposited by electron-cyclotron-resonance plasma-enhanced chemical vapor deposition
Author(s): Burt W. Fowler; David R. Stark; J. Xie; C. McDonald; Ronald A. Carpio; Sha Akbar
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Paper Abstract

Electron cyclotron resonance plasma-enhanced chemical vapor deposition has been used to deposit silicon oxide for use as an inter-layer dielectric between high aspect ratio metal lines. The energy from a 2.45 GHz microwave field in the presence of a divergent magnetic field is absorbed by O2 and Ar gas to create a high density, low energy plasma. The silicon source gas, SiH4, reacts with excited O species to initiate oxide deposition, during which the film is simultaneously etched by Ar and O ions. The gap fill capability and the degree of etching depend primarily on the radio frequency power applied to the wafer chuck. Films deposited using O2/SiH4 gas flow ratios ranging from 0.9 to 2.5 were measured using ellipsometry, FTIR, RBS, NRA, and MOS capacitors. The stoichiometry, refractive index, and dielectric constant are primarily controlled by the O2/SiH4 ratio. Films with a low relative dielectric constant can be deposited at rates in excess of 5000 angstroms/min with an etch component high enough to provide gap fill of high aspect ratio structures, thus making ECR CVD a viable tool for the current and future needs of the microelectronics industry.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156526
Show Author Affiliations
Burt W. Fowler, SEMATECH (United States)
David R. Stark, SEMATECH (United States)
J. Xie, SEMATECH (United States)
C. McDonald, SEMATECH (United States)
Ronald A. Carpio, SEMATECH (United States)
Sha Akbar, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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