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Proceedings Paper

Reactively sputtered coherent TiN process for sub-0.5-um technology
Author(s): Girish A. Dixit; Peter J. Wright; Scott Poarch; Robert H. Havemann; Ken Ngan; Jaim Nulman; H. Kieu; A. Tepman
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Paper Abstract

TiN films were sputtered deposited through a collimating medium under different conditions where the sputter target was maintained in nitrided and non-nitrided modes. In-situ rapid thermal (RTP) annealing was done in an applied materials metal anneal chamber (MAC) integrated with the Endura physical vapor deposition (PVD) system. The barrier properties of these films were evaluated for tungsten plug application. Contact resistances and junction leakage data are presented. It is seen that the TiN films deposited in the non-nitrided mode possess excellent barrier properties. This method of deposition offers significantly improved wafer throughputs for coherent sputtering of TiN. The MAC offers an excellent alternative to the conventional furnace annealing approach for contact silicidation and provides a means for improving productivity.

Paper Details

Date Published: 15 September 1993
PDF: 10 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156523
Show Author Affiliations
Girish A. Dixit, Texas Instruments Inc. (United States)
Peter J. Wright, Texas Instruments Inc. (United States)
Scott Poarch, Texas Instruments Inc. (United States)
Robert H. Havemann, Texas Instruments Inc. (United States)
Ken Ngan, Applied Materials, Inc. (United States)
Jaim Nulman, Applied Materials, Inc. (United States)
H. Kieu, Applied Materials, Inc. (United States)
A. Tepman, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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