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Proceedings Paper

Increasing the accuracy of lifetime predictions from accelerated electromigration tests
Author(s): Tim E. Turner
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Paper Abstract

As semiconductor technology continues its drive toward smaller geometries and faster speeds, the demands placed on a metal system continue to increase. While conservative design rules may theoretically keep the metal reliability identical over a wide range of geometries, the margin of error becomes increasingly smaller. This increased sensitivity has driven the development of an improved set of test structures designed to increase the amount of information obtained from a metal process evaluation. Data are presented to show inadequacies of the current test methods for assessing metal reliability. A proposal is made for an improved set of metal test structures and test techniques aimed at more accurately evaluating the thermal and current density effects on electromigration, estimating the physical `random defect density' in the metal and for estimating the process variation across a large sample of die, wafers and lots.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156522
Show Author Affiliations
Tim E. Turner, Turner Engineering Technology (United States)

Published in SPIE Proceedings Vol. 2090:
Multilevel Interconnection: Issues That Impact Competitiveness
Hoang Huy Hoang; Ron Schutz; Joseph B. Bernstein; Barbara Vasquez, Editor(s)

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