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Proceedings Paper

Porous silicon photodetector
Author(s): Ming Kwei Lee; K. R. Peng; C. H. Chu
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Paper Abstract

The porous silicon photodetector shows high band and high sensitivity properties. The porous silicon layer being the top layer of porous silicon photodetector, and the pore size distribution of porous silicon result in high band detectivity. Various porosities corresponding to various silicon wires would respond to various wavelengths of incident light.The high sensitivity is attributed to the textured surface, the direct band of porous silicon and the porous silicon layer thickness controllability of absorption region of metal-PS-silicon photodetector. The textured surface of porous silicon would reduce the reflection of incident light which would enhance the sensitivity of porous silicon photodetector.

Paper Details

Date Published: 22 September 1993
PDF: 4 pages
Proc. SPIE 2101, Measurement Technology and Intelligent Instruments, (22 September 1993); doi: 10.1117/12.156352
Show Author Affiliations
Ming Kwei Lee, National Sun Yat-Sen Univ. (Taiwan)
K. R. Peng, National Sun Yat-Sen Univ. (Taiwan)
C. H. Chu, National Sun Yat-Sen Univ. (Taiwan)

Published in SPIE Proceedings Vol. 2101:
Measurement Technology and Intelligent Instruments
Li Zhu, Editor(s)

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