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Proceedings Paper

High-resolution pattern formation featuring excellent dimension correlation by enhanced wettability development technology
Author(s): Shigeki Shimomura; Hisayuki Shimada; Rita Au; Mamoru Miyawaki; Tadahiro Ohmi
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Paper Abstract

We have demonstrated that the addition of surfactant to developer results in (1) the resolution of the contact holes as small as 0.30 micrometers with good dimension correlation, (2) an increase in the depth of focus at the minimum feature size, and (3) a reduction in the exposure energy needed to form fine patterns. The surfactant enhances the wettability of the developer to the photoresist, thus promoting dissolution of the photoresist, especially in narrow spaces such as contact holes. The optimal surfactant concentration in the developer performs superior development characteristics. In addition, we also demonstrate the effect of the molecular structure of surfactant on development performance.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154796
Show Author Affiliations
Shigeki Shimomura, Tohoku Univ. (Japan)
Hisayuki Shimada, Tohoku Univ. (Japan)
Rita Au, Tohoku Univ. (Japan)
Mamoru Miyawaki, Canon Inc. (United States)
Tadahiro Ohmi, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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