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Proceedings Paper

Evaluation of a deep-UV bilayer resist for sub-half micron lithography
Author(s): William R. Brunsvold; Kevin J. Stewart; Premlatha Jagannathan; Ratnam Sooriyakumaran; J. Parrill; Karl Paul Muller; Harbans S. Sachdev
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Paper Abstract

A chemically amplified silicon-containing resist has been formulated and evaluated as a thin imaging layer in a positive tone deep UV (DUV) bilayer scheme. The key component is a silicon-containing polymer which has been characterized by GPC, UV, and dissolution rate studies. Dose and focus latitudes were determined for 0.4 and 0.5 micrometers patterns exposed on a SVGL Micrascan I step and scan system and on KrF excimer laser steppers. The dose latitude on a GCA (0.35 NA) excimer was found to be 20% for 0.4 micrometers features and about 30% for 0.5 micrometers features (+/- 10% CD variation). Focus latitude was at least 2 micrometers for 0.5 micrometers patterns. Wafer to wafer LW uniformity as well as within water uniformity is shown. Typical processing involves 5 - 10 mJ/cm2 exposure doses, employing a 90 degree(s)C post-expose bake (PEB) and a 60 sec 0.21 N TMAH develop. The dependence of linewidth upon PEB was found to be about 13 nm per degree C for 0.5 micrometers features. Pattern transfer into the hardbaked i-line resist underlayer was done in an MLR chamber on an AME 5000. A low pressure etch is preferred to eliminate residue but this can lead to a higher non-uniformity across the wafer. Sidewall roughness was prevalent and this could be partially attributed to `feet' on the silicon-containing imaging layer.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154772
Show Author Affiliations
William R. Brunsvold, IBM Corp. (United States)
Kevin J. Stewart, IBM Corp. (United States)
Premlatha Jagannathan, IBM Corp. (United States)
Ratnam Sooriyakumaran, IBM Corp. (United States)
J. Parrill, IBM Corp. (United States)
Karl Paul Muller, IBM Corp. (United States)
Harbans S. Sachdev, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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