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Proceedings Paper

Advances in deep-UV processing using cluster tools
Author(s): Gary C. Escher; Gary Tepolt; Robert D. Mohondro
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Paper Abstract

Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].

Paper Details

Date Published: 15 September 1993
PDF: 5 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993);
Show Author Affiliations
Gary C. Escher, GCA, a Unit of General Signal (United States)
Gary Tepolt, GCA, a Unit of General Signal (United States)
Robert D. Mohondro, Machine Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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