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Proceedings Paper

Positive-tone dry-develop resist based on crosslinking a phenolic resin
Author(s): Scott A. MacDonald; Carl E. Larson; Hubert Schlosser; Phillip J. Brock; Nicholas J. Clecak; Jean M. J. Frechet
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Paper Abstract

We have previously shown that a copolymer of p-hydroxstyrene and p-acetoxymethylstyrene can be used as a sensitive deep UV resist. In that study we demonstrated that a formulation of this copolymer and an onium salt could be exposed, baked and developed in aqueous base to yield a high resolution negative tone relief image. In this paper we discuss a gas phase silylation process that converts this negative tone solvent-developable resist system into a positive tone dry-developable resist system. We have used an FT-IR microscope, coupled to a motorized X-Y stage, to study the silylation process as a function of UV exposure dose and silylation processing parameters. By altering the copolymer ratio, we found that resist contrast increased when the amount of acetoxymethylstyrene increased. This resist system and dry develop process were used to print 0.35 micrometers images at a DUV dose of approximately 25 mJ/cm2.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154762
Show Author Affiliations
Scott A. MacDonald, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Hubert Schlosser, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
Nicholas J. Clecak, IBM Almaden Research Ctr. (United States)
Jean M. J. Frechet, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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