The DESIRE^R process has been proposed as an attractive solution to lithographic problems, combining the performance of multilayer systems to the simplicity of monolayer processes. Despite the large number of studies devoted to this type of process, the various mechanisms involved during the silylation and dry development steps are not yet totally understood. The first part of the paper deals with the changes in solubility of the resist layer before and after silylation and suggests that the polarity of the resist is modified during the process. Surface tension measurements are then reported in order to quantitatively evaluate the changes in polarity of the silylated resist. Finally it is shown that the work of adhesion between silylated and non-silylated material can easily explain both the stability of the silylated islands during the HMDS process and the motion of these silylated areas during the dry development step.

Date Published: 15 September 1993
PDF: 6 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154759

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)