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Proceedings Paper

Characterization and simulation of acid-catalyzed DUV positive photoresist
Author(s): Nicholas K. Eib; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag
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Paper Abstract

An investigation of the dissolution behavior of an acid catalyzed deep ultraviolet (DUV) positive resist has been completed. The immersion develop dissolution rate as a function of dose and post exposure bake temperature was measured by Perkin Elmer Dissolution Rate Monitor (DRM) for single layer resist on a silicon substrate. A reaction-diffusion model has been built to describe the dependence of development rate on exposure dose and post exposure bake (PEB) time/temperature. A mixed diffusion model has been built to account for catalyst diffusion and quenching. Developed images have been compared with simulated image quality, line width, and process window.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154751
Show Author Affiliations
Nicholas K. Eib, IBM East Fishkill (United States)
Eytan Barouch, Princeton Univ. (United States)
Uwe Hollerbach, Princeton Univ. (United States)
Steven A. Orszag, Princeton Univ. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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