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Proceedings Paper

Acid-catalyzed single-layer resists for ArF lithography
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Paper Abstract

A positive-tone single-layer resist for use with 193 nm radiation has been developed. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and (tau) -butyl methacrylate, along with a photoacid generator. The chemically amplified deprotection of the (tau) -butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous base solutions. The resist sensitivity is less than 10 mJ/cm2, and its inherent resolution is better than 0.1 micrometers . These acrylate-based systems have potential for both lower cost and better environmental stability compared with the deep ultraviolet chemically amplified resists which use phenolic resins.

Paper Details

Date Published: 15 September 1993
PDF: 9 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154749
Show Author Affiliations
Roderick R. Kunz, Lincoln Lab./MIT (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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