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Proceedings Paper

Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol
Author(s): Takashi Hattori; Leo Schlegel; Akira Imai; Nobuaki Hayashi; Takumi Ueno
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Paper Abstract

Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for deep UV lithography. Infrared spectroscopy measurements showed that THP-M in the resist film cannot be completely deprotected by photo-generated acid. This causes a poor developability of the resist containing highly tetrahydropyranyl (THP)-protected polyvinylphenol in an aqueous base developer. In order to improve the developability in the pure aqueous base developer, we utilized partially THP-protected polyvinylphenol. To determine the optimum protection degree, we examined the relation between the dissolution rate of THP-M films and THP-protection degree in developers. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl)iodonium triflate resolved 0.30 micrometers line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm2.

Paper Details

Date Published: 15 September 1993
PDF: 9 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154747
Show Author Affiliations
Takashi Hattori, Hitachi Central Research Lab. (Japan)
Leo Schlegel, Hitachi Central Research Lab. (Japan)
Akira Imai, Hitachi Central Research Lab. (Japan)
Nobuaki Hayashi, Hitachi Central Research Lab. (Japan)
Takumi Ueno, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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