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Proceedings Paper

193-nm deep-UV lithography system using a line-narrowed ArF excimer laser
Author(s): Bruce W. Smith; Malcolm C. Gower; Mark Westcott; Lynn F. Fuller
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Paper Abstract

A small field refractive projection system for operation at the 193.3 nm wavelength of a spectrally narrowed ArF excimer laser is being constructed. The 1 mm field, 20X system operates with a variable objective lens numerical aperture from 0.30 to 0.60, variable partial coherence, and control over illumination fill and mask tilt. A 30 W maximum power ArF excimer laser has been spectrally line-narrowed through incorporation of tilted Fabry-Perot etalons into the laser cavity, allowing linewidths on the order of 7 cm-1 (26 pm) with one etalon and 0.5 cm-1 (2 pm) with two etalons. This work reports laser line narrowing and lens performance results. Simulations of aerial image intensity distributions from lens aberration data are presented for 0.25 and 0.20 micron geometry.

Paper Details

Date Published: 8 August 1993
PDF: 12 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150488
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Malcolm C. Gower, Exitech Ltd. (United Kingdom)
Mark Westcott, GCA Tropel (United States)
Lynn F. Fuller, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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