Proceedings Paper
Chromeless phase mask by resist silylation for i-line lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
The generation of the required phase difference is made by silylation of a novolak based resist using the swelling of the exposed resist. The contrast and the image transfer of these kinds of transparent masks are calculated by simulation. Results of optical image transfer using this phase mask are presented and discussed. The high resolution of 0.3 micrometers for a simple i- line technique is demonstrated by SEM micrographs.
Paper Details
Date Published: 8 August 1993
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150461
Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150461
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik GmbH (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik GmbH (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik GmbH (Germany)
Ulrich Haak, Institut fuer Halbleiterphysik GmbH (Germany)
Wolfgang W. Hoeppner, Institut fuer Halbleiterphysik GmbH (Germany)
Georg G. Mehliss, Allresist GmbH (Germany)
Wolfgang W. Hoeppner, Institut fuer Halbleiterphysik GmbH (Germany)
Georg G. Mehliss, Allresist GmbH (Germany)
Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)
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