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Proceedings Paper

Film thickness measurement of amorphous silicon
Author(s): Wayne D. Clark; Mark E. Keefer; Dawn-Marie Cook
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Paper Abstract

Amorphous silicon has been used extensively in electro-optical applications. Its use as a gate electrode material for advanced CMOS devices is currently being developed, as it offers certain desirable characteristics compared to the commonly used polycrystalline silicon. We have studied a series of amorphous silicon films deposited at varying temperatures. The deposition temperature ranged from 540 degree(s)C to 570 degree(s)C. The nominal thickness was approximately 1575 angstroms to 3170 angstroms. Due to the differences in deposition temperature, one would expect the optical properties to vary slightly. Using software that allows analysis of the spectral information, the dispersion was examined for each sample. With this knowledge, the film thicknesses could be reliably measured.

Paper Details

Date Published: 4 August 1993
PDF: 11 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148976
Show Author Affiliations
Wayne D. Clark, SEMATECH (United States)
Mark E. Keefer, Prometrix Corp. (United States)
Dawn-Marie Cook, Prometrix Corp. (United States)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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