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Proceedings Paper

Utilizing diffraction imaging for nondestructive wafer topography measurements
Author(s): Tim M. Morris; Dennis S. Grimard; Chiao-Fe Shu; Fred Lewis Terry Jr.; Michael E. Elta; Ramesh C. Jain
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Paper Abstract

Real-time process monitoring has been a primary concern of the semiconductor industry for a number of years. In an attempt to provide higher yield and performance it has become accepted that the monitoring of the etch step is critical. This is the primary motivation for the development of a real time process monitor with particular attention paid to wafer monitoring at the surface. To this end, the use of the results of diffraction, in particular, diffraction from 3-dimensional gratings is proving to be a viable technique for real time, process monitoring. Thus, the primary focus of this paper is to present the progress made toward the development of a non destructive, real time, optical metrology based system for direct wafer monitoring, utilizing the results of diffraction from a grating structure. The results of experiment and simulation will also be discussed.

Paper Details

Date Published: 4 August 1993
PDF: 6 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148964
Show Author Affiliations
Tim M. Morris, Univ. of Michigan (United States)
Dennis S. Grimard, Univ. of Michigan (United States)
Chiao-Fe Shu, Univ. of Michigan (United States)
Fred Lewis Terry Jr., Univ. of Michigan (United States)
Michael E. Elta, Univ. of Michigan (United States)
Ramesh C. Jain, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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