Share Email Print

Proceedings Paper

Observation of deep holes using new technique
Author(s): Fumio Mizuno; Satoru Yamada; Akihiro Miura; Hideo Todokoro
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We discovered the phenomena in scanning electron microscopy that the bottom of deep holes can be observed clearly when a high energy electron beam is irradiated. In order to utilize this phenomena, we developed a novel instrument that generates a scanning electron probe of 50 to 200 keV with TV-scan rate that enables us to inspect maximum 8 inches diameter wafers. In the past, we could inspect deep holes by observing cross sectional view of a hole milled with a focused ion beam (FIB). Using the novel instrument, we can easily inspect such holes without destroying samples. This observation does not depend on the specimen conditions, such as aspect ratio of holes and specimen charging that often occurs in the case of observing insulators. This instrument enables us to observe inside structures of semiconductor devices. Irradiation damage on semiconductor devices, such as threshold voltage and sub-threshold coefficient deviation of MOS transistors can be recovered, except for the irradiated area by means of hydrogen annealing of 30 minutes with temperature of 450 degree(s)C.

Paper Details

Date Published: 4 August 1993
PDF: 10 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148954
Show Author Affiliations
Fumio Mizuno, Hitachi, Ltd. (Japan)
Satoru Yamada, Hitachi, Ltd. (Japan)
Akihiro Miura, Hitachi, Ltd. (Japan)
Hideo Todokoro, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

© SPIE. Terms of Use
Back to Top