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Proceedings Paper

Positive DUV resist (APEX-E) by IBM for SVGL Micrascan
Author(s): Vasanti A. Deshpande; Nathan S. Thane; John S. Hargreaves; Yumiko Takamori; Eric M. Apelgren; Peter Freeman; Karey L. Holland
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Paper Abstract

The imaging performance of IBM's positive DUV resist is evaluated on SVGL Micrascan. Preliminary results on GCA excimer laser are included. Contamination effects are studied using 0.5 micron lines and spaces on Micrascan I using cross-sections at various delay times. The effects of delay times between different processing steps such as coat to expose and expose to PEB are studied. The performance is further evaluated by processing wafer lots on line for Micrascan I and II. Data on resolution, depth of focus and process latitude are presented for 0.35 and 0.5 micron geometries. The effects of PEB temperature variation are studied. Performance on different substrates (poly, metals and contacts) is evaluated.

Paper Details

Date Published: 4 August 1993
PDF: 19 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148938
Show Author Affiliations
Vasanti A. Deshpande, SEMATECH (United States)
Nathan S. Thane, SEMATECH (United States)
John S. Hargreaves, SEMATECH (United States)
Yumiko Takamori, SEMATECH (United States)
Eric M. Apelgren, SEMATECH (United States)
Peter Freeman, SEMATECH (United States)
Karey L. Holland, SEMATECH (United States)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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