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Proceedings Paper

Avalanche photodetector array based on metal-resistive layer-semiconductor structures
Author(s): V. B. Zalessky; Tamara R. Leonova; S. A. Malyshev; V. R. Pan; S. Yu. Rakhley; S. A. Shunevitch
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Paper Abstract

The results of investigations of avalanche photodetectors based on metal-resistive layer-silicon (MRLS) structures are presented. Consideration is given to a 10 X 10 MRLS photodetector array.

Paper Details

Date Published: 28 June 1993
PDF: 6 pages
Proc. SPIE 1807, Photonic Switching, (28 June 1993); doi: 10.1117/12.147940
Show Author Affiliations
V. B. Zalessky, Institute of Electronics (Belarus)
Tamara R. Leonova, Institute of Electronics (Belarus)
S. A. Malyshev, Institute of Electronics (Belarus)
V. R. Pan, Institute of Electronics (Belarus)
S. Yu. Rakhley, Institute of Electronics (Belarus)
S. A. Shunevitch, Institute of Electronics (Belarus)

Published in SPIE Proceedings Vol. 1807:
Photonic Switching
Andrey M. Goncharenko; Fedor V. Karpushko; George V. Sinitsyn; Sergey P. Apanasevich, Editor(s)

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