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Proceedings Paper

Investigation of evolution of microprofile on silicon surface under high-power laser-pulsed effect
Author(s): Alexander F. Banishev; I. M. Chistyakov
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Paper Abstract

The results are presented of local interferometry investigation of the microrelief evolution of silicon surface under the high power laser pulsed effect (Ppulse approximately equals 1 J, (lambda) equals 1.06 micrometers , (tau) pulse approximately equals 1.5 msec). It has been shown that the formation of the periodic microrelief is preceded by the excitation and concurrence of surface deformations of various types.

Paper Details

Date Published: 24 June 1993
PDF: 3 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147621
Show Author Affiliations
Alexander F. Banishev, Research Ctr. of Technological Lasers (Russia)
I. M. Chistyakov, Research Ctr. of Technological Lasers (Russia)

Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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