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Proceedings Paper

Buried heterostructure lasers based on InGaAsP/InP
Author(s): Ralph A. Logan; B. Lee; R. F. Karlicek; Sung-Nee G. Chu
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Paper Abstract

Buried heterostructure lasers are formed by the regrowth of InP current blocking junctions around mesas etched in planar structures. Using metal organic vapor phase epitaxy (MOVPE) at atmospheric pressure, growth patterns were observed by inserting lattice matched 1.5 nm InGaAs or doping striations in the regrown layers. The conditions for planar regrowth are described using wet-etched mesas. With mesas formed by reactive ion etching, planar regrowth is easily achievable when Cl is added to the gas ambient using the pyrolysis of trichloroethane (TCA). When RIE mesas are cleaned and slightly etched (< 0.1 micrometers ), the laser properties are indistinguishable from those formed by wet etching, a result that has important implications for the processing of large area wafers (2 inch diameter) uniformly into lasers with controlled dimensional properties.

Paper Details

Date Published: 24 June 1993
PDF: 9 pages
Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); doi: 10.1117/12.147587
Show Author Affiliations
Ralph A. Logan, AT&T Bell Labs. (United States)
B. Lee, AT&T Bell Labs. (United States)
R. F. Karlicek, AT&T Bell Labs. (United States)
Sung-Nee G. Chu, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1851:
Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices
Henryk Temkin, Editor(s)

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