A new theoretical framework for modeling the nonlinear laser heating of semiconductors is presented by incorporating the dynamical behavior of semiconductors; the temperature-carrier coupling, the generation and recombination of defects, the diffusion of defects, the diffusion of impurities by defect-dopant pair mechanism, and chemical reaction between species. In this study, we apply our model to n-type silicon irradiated by a nanosecond pulsed Nd:YAG laser. The dynamical evolution of laser-semiconductor interaction process is examined by calculation of carrier, defect, and impurity concentration profiles.

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147420

Published in SPIE Proceedings Vol. 1848:
24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)