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Proceedings Paper

Double-driven semiconductor modulator: current- and photoinjection
Author(s): Lev S. Sadovnik; Vladimir A. Manasson; Freddie Shing-Hong Lin
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Paper Abstract

A simple etalon-type structure was considered as the basis for a light modulator. The distinction is made between thermally induced refractive index changes and the carrier injection mechanism. Experimental results are presented to demonstrate IR light modulation in a silicon etalon structure. The modulation is controlled by both current injection and visible light changing silicon's index. This modulator was used for coherent discrimination of low level cw laser illumination on a high irradiance incoherent background.

Paper Details

Date Published: 1 July 1993
PDF: 6 pages
Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); doi: 10.1117/12.147106
Show Author Affiliations
Lev S. Sadovnik, Physical Optics Corp. (United States)
Vladimir A. Manasson, Physical Optics Corp. (United States)
Freddie Shing-Hong Lin, Physical Optics Corp. (United States)

Published in SPIE Proceedings Vol. 1849:
Optoelectronic Interconnects
Ray T. Chen, Editor(s)

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