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Proceedings Paper

Carrier-carrier interactions in GaAs investigated by femtosecond spectroscopy
Author(s): Ting Gong; Philippe M. Fauchet
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Paper Abstract

We present systematic femtosecond pump-probe studies of the initial scattering and cooling processes of hot electrons in intrinsic, n-type, and p-type GaAs for carrier densities from 8 X 1015 to 1019 cm-3 excited at 2 eV. The role of electron- electron scattering in intra-(Gamma) -valley equilibrium, its dependence on the injected carrier density, and its influence on the amplitude and recovery rate of the initial absorption bleaching are established. For a low density (approximately 3 X 1016 cm-3), the electron-electron scattering is observed to be most efficient when all the electrons are in Bloch states with the same (large) kinetic energy. The importance and time scales of electron-hole and electron-plasmon interactions are also revealed.

Paper Details

Date Published: 17 June 1993
PDF: 10 pages
Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147055
Show Author Affiliations
Ting Gong, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 1861:
Ultrafast Pulse Generation and Spectroscopy
Timothy R. Gosnell; Antoinette J. Taylor; Keith A. Nelson; Michael C. Downer, Editor(s)

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