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Proceedings Paper

Breakdown of high-voltage silicon devices
Author(s): Frank E. Peterkin; B. J. Hankla; R. A. Peterson; A. Rhagavendran; Paul Frazer Williams
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Paper Abstract

We present the results of empirical studies of the breakdown of p+-i-n+, n+-i-n+, and p+-i-p+ silicon structures with approximately 1 cm long intrinsic regions. These results show that the contacts have a strong effect on the breakdown characteristics of these devices. We present results for laminated structures and for a device with a ribbed surface which show that the breakdown characteristics of silicon devices can be improved significantly by such geometry modifications. We also present empirical evidence that double injection effects occur in p+-i-n+ devices, and that these effects will limit the efficacy of such devices when subject to relatively long voltage pulses.

Paper Details

Date Published: 9 June 1993
PDF: 12 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146564
Show Author Affiliations
Frank E. Peterkin, Univ. of Nebraska/Lincoln (United States)
B. J. Hankla, Univ. of Nebraska/Lincoln (United States)
R. A. Peterson, Univ. of Nebraska/Lincoln (United States)
A. Rhagavendran, Univ. of Nebraska/Lincoln (United States)
Paul Frazer Williams, Univ. of Nebraska/Lincoln (United States)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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