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Proceedings Paper

Nonalloyed contacts to p-type GaAs
Author(s): Peter A. Barnes; Joongseo Park; John B. Crofton
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Paper Abstract

The formation of low resistance ohmic contacts to semiconductor devices in which no melting ('alloying') of the contacting metals occurs is highly desirable. To form these contacts a very thin depletion layer must be created at the metal-semiconductor, MS, interface with tunneling occurring at the Fermi level. We describe two contacting schemes to p-type GaAs that avoid the alloying step and permit the use of robust refractory metals for the contacts. The p-contact will be important in proposed photo conductive switches using a P-i-N structure instead of the more common N-i-N structure. The work reported describes our studies of (a) a simple diffusion apparatus to create degenerate hole concentrations near the semiconductor interface and (b) a very stable highly doped epitaxial layer grown using Liquid Phase Epitaxy (LPE).

Paper Details

Date Published: 9 June 1993
PDF: 15 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146540
Show Author Affiliations
Peter A. Barnes, Auburn Univ. (United States)
Joongseo Park, Auburn Univ. (United States)
John B. Crofton, Auburn Univ. (United States)


Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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