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Proceedings Paper

Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair
Author(s): Lloyd R. Harriott; R. R. Kola; George K. Celler
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Paper Abstract

Finely focused ion beams have been used for repair of defects in photomasks and X-ray masks either by sputter removal of excess absorber material or by deposition of new absorber material. These mask structures employ polycrystalline metal absorbers with grain sizes in the 0.1 micrometers range. As feature dimensions are pushed downward, the effects of these grains become more important. A great deal of roughness can occur during FIB sputter removal of excess absorber for defect repair due to ion channeling and the resulting spatially nonuniform sputtering. In this paper, we describe a method for reducing the roughness in defect repair for Tungsten X-ray masks using chemically assisted FIB etching and a Cr/W/Cr multilayer mask structure.

Paper Details

Date Published: 24 June 1993
PDF: 6 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146534
Show Author Affiliations
Lloyd R. Harriott, AT&T Bell Labs. (United States)
R. R. Kola, AT&T Bell Labs. (United States)
George K. Celler, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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