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Proceedings Paper

Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization
Author(s): Jeffrey M. Calvert; Tim S. Koloski; Walter J. Dressick; Charles S. Dulcey; Martin C. Peckerar; Franco Cerrina; James Welch Taylor; Doowon Suh; Obert R. Wood II; Alastair A. MacDowell; Raissa M. D'Souza
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Paper Abstract

Soft x-ray synchrotron radiation, of wavelength 14 nm, has been used to pattern self- assembled monolayer films, which were then selectively metallized using electroless deposition. Organosilane precursors of the general type RSiX3 (R equals organic functional group; X equals Cl, OCH3) are used to form covalently bound ultrathin films by molecular self-assembly on Si wafers. These films are approximately one monolayer (approximately 1 nm) thick. X-ray exposure was used to remove or transform the R groups in selected areas of the film. The laterally patterned reactivity on the surface was then used as a template for the additive deposition of a thin layer of electroless nickel in the unexposed regions. The Ni metal layer can then be used as a plasma etch mask for pattern transfer. Metal features with linewidths to <EQ 0.25 micrometers have been produced with exposure doses of 50 mJ/cm2.

Paper Details

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); doi: 10.1117/12.146514
Show Author Affiliations
Jeffrey M. Calvert, Naval Research Lab. (United States)
Tim S. Koloski, Naval Research Lab. (United States)
Walter J. Dressick, Naval Research Lab. (United States)
Charles S. Dulcey, Naval Research Lab. (United States)
Martin C. Peckerar, Naval Research Lab. (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Doowon Suh, Univ. of Wisconsin/Madison (United States)
Obert R. Wood II, AT&T Bell Labs. (United States)
Alastair A. MacDowell, AT&T Bell Labs. (United States)
Raissa M. D'Souza, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1924:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III
David O. Patterson, Editor(s)

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