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Proceedings Paper

Thermal imaging of electronic materials and devices using the Atomic Force Microscope
Author(s): Arunava Majumdar; J. P. Carrejo; J. Lai; M. Chandrachood
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Paper Abstract

We have developed a new and simple technique of thermal imaging with sub-micron spatial resolution using the atomic force microscope (AFM). By using a thermocouple as an AFM tip, we can simultaneously observe the topography and the temperature field of material surfaces. The method is particularly unique for application of biased electronic devices or interconnects where there could be different materials and potential variations on a scan surface. Application to a n-GaAs MESFET has revealed hot spots under the drain-side of the gate. Thermal images of a biased polycrystalline Al-Cu via structure show the grain boundaries to be hotter than within the grain suggesting higher electron scattering rates. We have also observed the effects of current crowding in generating hot spots in the via structure. An error analysis showed that the difference between the measured temperature and the estimated actual device temperature is about 4 percent.

Paper Details

Date Published: 4 June 1993
PDF: 9 pages
Proc. SPIE 1855, Scanning Probe Microscopies II, (4 June 1993); doi: 10.1117/12.146380
Show Author Affiliations
Arunava Majumdar, Univ. of California/Santa Barbara (United States)
J. P. Carrejo, Motorola Advanced Technology Ctr. (United States)
J. Lai, Univ. of California/Santa Barbara (United States)
M. Chandrachood, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 1855:
Scanning Probe Microscopies II
Clayton C. Williams, Editor(s)

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