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Proceedings Paper

Ti-thickness-dependent electromigration resistance for Ti/Al-Cu-Si metallization with and without barrier rapid-thermal-anneal in an ammonia ambient
Author(s): Kuan Yu Fu; Hisao Kawasaki; Johnson O. Olowolafe; Ronald E. Pyle
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Paper Abstract

The electromigration resistance for Al-Cu-Si alloy over a Ti underlayer as a function of the initial Ti thickness in the range of 0 angstroms - 1000 angstroms is investigated. After the Ti deposition, test structures have been divided into groups with and without a rapid thermal anneal (RTA) in an ammonia ambient to form a TiN barrier. The electromigration resistance of these barrier metallization systems, in general, increases with the initial Ti thickness, except when the initial Ti thickness is less than 600 angstroms for the RTA TiN/Al-Cu-Si system. A model is proposed to explain this electromigration characteristic as a function of the initial Ti thickness for these barrier metallization systems, with the support of texture analysis of the Al-alloy surface and stress measurements of barrier layers using X-ray diffraction and wafer curvature. This study highlights a direction of how a Ti-based barrier metallization system should be processed in order to optimize its electromigration resistance.

Paper Details

Date Published: 21 May 1993
PDF: 11 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145482
Show Author Affiliations
Kuan Yu Fu, Motorola, Inc. (United States)
Hisao Kawasaki, Motorola, Inc. (United States)
Johnson O. Olowolafe, Motorola, Inc. (United States)
Ronald E. Pyle, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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