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Proceedings Paper

Barrier layer effects and the use of Ti:W capping layers on the electromigration performance of Al-Si(1%)-Cu(0.5%) alloy
Author(s): Jeff S. May; Dave J. Yost; Carole D. Graas; Joe W. McPherson
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Paper Abstract

Electromigration performance is investigated for Al-Si(1%)-Cu(0.5%) alloy on a CVD-W or Ti:W barrier layer, and the effectiveness of a Ti:W capping layer to suppress electromigration is explored. Compared to a Ti:W barrier layer, the surface roughness of the CVD-W barrier layer degrades electromigration performance, however, a capping layer of Ti:W sequentially sputtered on top of the aluminum-alloy will substantively improve the electromigration performance when either barrier layer system is used. The improvement is observed to increase with the thickness of the Ti:W capping layer. Investigations of the failure kinetics and material properties indicate the EM performance improvement is primarily due to changes in the Al-alloy micro-structure.

Paper Details

Date Published: 21 May 1993
PDF: 9 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145473
Show Author Affiliations
Jeff S. May, Texas Instruments Inc. (United States)
Dave J. Yost, Texas Instruments Inc. (United States)
Carole D. Graas, Texas Instruments Inc. (United States)
Joe W. McPherson, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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