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Proceedings Paper

Modeling electromigration lifetime under pulsed and AC current stress
Author(s): Chenming Hu; Nathan W. Cheung; J. Tao; Boon-Khim Liew
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Paper Abstract

Electromigration lifetime under DC current stress is now routinely measured to support new metallization process development as well as to monitor the control of an existing process. The measured DC lifetime value, or design rule, is the only link between process technology and circuit design for metal reliability. This paper reviews a defect relaxation model for pulsed DC (non-alternating) current stress lifetime and a damage-healing model for AC (bidirectional) current stress lifetime. The purpose is to model the metal reliability of IC's. Both models significantly raise the predicted lifetime beyond the predictions of some previous models.

Paper Details

Date Published: 21 May 1993
PDF: 7 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145472
Show Author Affiliations
Chenming Hu, Univ. of California/Berkeley (United States)
Nathan W. Cheung, Univ. of California/Berkeley (United States)
J. Tao, Univ. of California/Berkeley (United States)
Boon-Khim Liew, Cypress Semiconductor (United States)

Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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