The reliability of the narrow, passivated metal lines connecting devices in microelectronic circuits may well define an ultimate limit for achievable device density and circuit performance. Rather than average lifetimes, we are usually concerned with the first failures among millions of lines. The extrapolation of a limited number of accelerated test results to service conditions and very early failure clearly requires a fundamental understanding of the possible failure mechanisms. Based on recent theoretical progress we discuss current and potential capabilities in the modelling of failure distributions. In general, electromigration induced failure distributions can be calculated, if the detailed distributions of microstructure, precipitates and thermal stress induced voids are known.

Date Published: 21 May 1993
PDF: 24 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145468

Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)