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Proceedings Paper

Parylene as a conformal insulator for submicron multilayer interconnection
Author(s): Xin Zhang; S. Dabral; B. J. Howard; Joseph Bica; Chien Chiang; V. Ochoa; P. J. Ficalora; Christoph O. Steinbruchel; H. Bakhru; Toh-Ming Lu; John F. McDonald
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Paper Abstract

Planarization, conformal coating and etch selectivity are three key areas for successful fabrication of submicron interconnections, BCl3 and BCl3/N2 RIE (Reactive Ion Etch) are usually used to define high aspect ratio and fine edge submicron Al lines. Polymers have potential for being used as the insulator for multilevel interconnections, because of their low dielectric constants. Due to viscosity, it is difficult to coat the space between submicron metal lines with spin on formulations for polymers. Parylene is a family of conformal vapor depositable polymers with many attractive attributes, such as low dielectric constant (2.38 - 2.65), no outgassing or moisture uptake, room temperature deposition, low stress, good gap filling and local planarization properties. However, with this 'new' polymer insulator, selectivity becomes important for proper etch stop. In this paper the RIE etch selectivities of Al and parylene have been investigated and the selectivity explored to pattern micron feature size interconnections. The Al was deposited on parylene and patterned for studying etch selectivity. The planarization capability of parylene was also studied. It is demonstrated that high aspect ratio sub-micron trenches could be successfully conformally coated with parylene. The metal-polymer adhesion and diffusion characteristics are also examined; and low mechanical stress for the dielectric are demonstrated.

Paper Details

Date Published: 21 May 1993
PDF: 12 pages
Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); doi: 10.1117/12.145463
Show Author Affiliations
Xin Zhang, Rensselaer Polytechnic Institute (United States)
S. Dabral, Intel Corp. (United States)
B. J. Howard, Rensselaer Polytechnic Institute (United States)
Joseph Bica, Rensselaer Polytechnic Institute (United States)
Chien Chiang, Intel Corp. (United States)
V. Ochoa, Intel Corp. (United States)
P. J. Ficalora, Rensselaer Polytechnic Institute (United States)
Christoph O. Steinbruchel, Rensselaer Polytechnic Institute (United States)
H. Bakhru, SUNY/Albany (United States)
Toh-Ming Lu, Rensselaer Polytechnic Institute (United States)
John F. McDonald, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 1805:
Submicrometer Metallization: Challenges, Opportunities, and Limitations
Thomas Kwok; Takamaro Kikkawa; Krishna Shenai, Editor(s)

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