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Proceedings Paper

R&D on optoelectronics at OES/ITRI
Author(s): Min-Shyong Lin; GouChung Chi
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Paper Abstract

Optoelectronics research has been established at OES/ITRI since 1981. The R&D program started from compound semiconductor crystal growth. The major contribution is the development of a modified horizontal Bridgman method for growing GaAs single crystals. In the area of optoelectronic devices, both liquid phase epitaxy (LPE) and the metalorganic vapor phase epitaxy (MOVPE) are used to fabricate most of the light emitting diodes (LED), laser diodes (LD), and photodetectors (PD). The light sources with emitting light wavelength from visible 0.65 micrometers to 1.3 micrometers were made. Detectors, such as Si PIN and InGaAs PIN were developed. We are focusing on a new material system, i.e., AlGaInP. The LED and LD at the wavelength of 0.67 micrometers were grown by MOVPE. The threshold current is about 60 mA for a ridge-waveguide laser.

Paper Details

Date Published: 11 May 1993
PDF: 11 pages
Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144148
Show Author Affiliations
Min-Shyong Lin, Industrial Technology Research Institute (Taiwan)
GouChung Chi, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 1979:
1992 International Conference on Lasers and Optoelectronics
Sui-Sheng Mei; Bingkun Zhou, Editor(s)

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