We report the progress of our work on the observation and the characterization of ⁸⁷Rb vapor resonances in order to frequency-lock a 1529 nm DFB semiconductor laser. We present energy levels diagrams corresponding to the 5P_3/2 yields 4D_5/2 and 4D_3/2 transitions of rubidium atoms, respectively at 1529.4 and 1529.3 nm (196.02 and 196.04 THz). Basic emission characteristics of our DFB laser are also given. We then show the absorption profiles of a probe laser emitting around 1529 nm while the ⁸⁷Rb vapor is optically pumped at 780.2 nm (D₂ line at 384.2 THz) using a 30 mW AlGaAs laser. We finally present, for this experiment, the dependence of the probe laser absorption resonance depth and linewidth on the pump power.

Date Published: 30 April 1993
PDF: 10 pages
Proc. SPIE 1837, Frequency-Stabilized Lasers and Their Applications, (30 April 1993); doi: 10.1117/12.143667

Published in SPIE Proceedings Vol. 1837:
Frequency-Stabilized Lasers and Their Applications
Y. C. Chung, Editor(s)