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Proceedings Paper

Effect of bulk doping on the etching rate of silicon by halogen atoms
Author(s): Andrey I. Krechetov
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Paper Abstract

The concept of field-assisted etching is developed. Numerical solution is obtained for the equilibrium flux of negative halogen ions through a thin (h <EQ 10 angstrom) buffer layer of reaction onto the surface of silicon of various bulk dopings. Results of the numerical simulation are compared with the experimental data.

Paper Details

Date Published: 16 April 1993
PDF: 15 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.143240
Show Author Affiliations
Andrey I. Krechetov, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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