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Proceedings Paper

Chamber contamination in ashing processes of ion-implanted photoresist
Author(s): Laurent Kassel; Jeff R. Perry
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Paper Abstract

Ion-implanted photoresist is known to be difficult to remove using plasma ashing because of its carbonized top layer. After ion implantation, heating of the wafer substrate in ashers can cause resist popping if the temperature exceeds the implantation bake temperature. This paper presents chamber contamination measurements following ashing of implanted photoresist. Among the four implant species tested, boron resulted in the most severe resist popping. Higher implant dose, energy, and ashing temperature also caused more popping of the resist. In general, more severe resist popping during ashing caused more residues to be left on subsequent wafers put through the chamber. The type of asher had a large effect on redeposition of residues on subsequent wafers.

Paper Details

Date Published: 16 April 1993
PDF: 8 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142939
Show Author Affiliations
Laurent Kassel, National Semiconductor Corp. (United States)
Jeff R. Perry, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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