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Proceedings Paper

Introduction of a new high-density plasma reactor concept for high-aspect-ratio oxide etching
Author(s): Jeffrey Marks; K. Collins; C. L. Yang; David Groechel; Peter R. Keswick; Calum Cunningham; Mitch Carlson
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Paper Abstract

ULSI oxide etch requirements present a fundamental challenge which cannot be easily overcome with existing oxide etch technology. The principal issue is to provide a wide process window which simultaneously provides; high etch rate with good uniformity, high selectivity with minimal microloading, anisotropic profiles on high aspect ratio structures and all achieved under low damage etch conditions free of device degradation. This paper introduces an innovative application of inductively coupled rf technology which demonstrates a low pressure high density plasma (HDP) etch process, capable of meeting the oxide etch requirements of 0.35 micrometers device technology and beyond. Evidence is also provided of a newly characterized low fluorine polymer (LFP), which forms during the etch process providing anisotropic profiles on high aspect ratio structures and selectivity to a range of substrate materials.

Paper Details

Date Published: 16 April 1993
PDF: 13 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142917
Show Author Affiliations
Jeffrey Marks, Applied Materials, Inc. (United States)
K. Collins, Applied Materials, Inc. (United States)
C. L. Yang, Applied Materials, Inc. (United States)
David Groechel, Applied Materials, Inc. (United States)
Peter R. Keswick, Applied Materials, Inc. (United States)
Calum Cunningham, Applied Materials, Inc. (United States)
Mitch Carlson, SEMATECH (United States)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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