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Proceedings Paper

Plasma etching of silylated photoresist: a study of mechanisms
Author(s): Olivier P. Joubert; Michel J. Pons; Francoise Debaene; Andre P. Weill
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Paper Abstract

We have studied the relevant parameters involved in the dry development of silylated polymers. In particular the influence of substrate temperature, ion energy, and atomic oxygen concentration is investigated. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer. Improvements of the process are suggested.

Paper Details

Date Published: 16 April 1993
PDF: 14 pages
Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); doi: 10.1117/12.142909
Show Author Affiliations
Olivier P. Joubert, CNET-CNS (France)
Michel J. Pons, CNET-CNS (France)
Francoise Debaene, CNET-CNS (France)
Andre P. Weill, CNET-CNS (France)

Published in SPIE Proceedings Vol. 1803:
Advanced Techniques for Integrated Circuit Processing II
James A. Bondur; Gary Castleman; Lloyd R. Harriott; Terry R. Turner, Editor(s)

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