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Proceedings Paper

High-speed InP-based HBT integrated circuits
Author(s): Joe E. Jensen; William E. Stanchina; Robert A. Metzger; M. E. Hafizi; Ting-Ping Liu; David B. Rensch
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Paper Abstract

This paper describes the progress of AlInAs/GaInAs HBT devices and ICs. A cutoff frequency (fT) and a maximum frequency of oscillation of 130 GHz and 91 GHz, respectively, have been achieved with graded base-emitter junctions. A divide-by-four circuit clocked at 39.5 GHz, an 8/9 dual modulus divider consisting of 128 transistors clocked at 9 GHz, a broad band amplifier with 8 dB gain and 33 GHz bandwidth, and a dc-to-16-GHz Gilbert Gain Cell active mixer will be described.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.142553
Show Author Affiliations
Joe E. Jensen, Hughes Research Labs. (United States)
William E. Stanchina, Hughes Research Labs. (United States)
Robert A. Metzger, Hughes Research Labs. (United States)
M. E. Hafizi, Hughes Research Labs. (United States)
Ting-Ping Liu, Hughes Research Labs. (United States)
David B. Rensch, Hughes Research Labs. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics
John Edward Bowers; Umesh K. Mishra, Editor(s)

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