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Proceedings Paper

Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping
Author(s): Emi Ishida; Karl-Josef Kramer; Thomas W. Sigmon; Kurt H. Weiner
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Paper Abstract

Shallow junctions under silicide contact layers have been fabricated using a gas-phase dopant source and pulsed laser heating. A spatially homogenized 308 nm XeCl pulsed laser is used to drive adsorbed gas phase dopant species, e.g. BF3, AsF5, PF5, into the silicide overlayers and to outdiffuse dopants into the silicon substrate. High interface concentrations (Cint > 1020 atoms/cm3) and junctions < 1500 angstroms in depth have been obtained using this technique. Film/substrate interface roughness is unaffected by laser irradiation. Results from SIMS, RBS, and TEM analyses are presented in this paper.

Paper Details

Date Published: 16 March 1993
PDF: 7 pages
Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); doi: 10.1117/12.142090
Show Author Affiliations
Emi Ishida, Stanford Univ. (United States)
Karl-Josef Kramer, Stanford Univ. (United States)
Thomas W. Sigmon, Stanford Univ. (United States)
Kurt H. Weiner, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 1804:
Rapid Thermal and Laser Processing
Dim-Lee Kwong; Heinrich G. Mueller, Editor(s)

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