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Proceedings Paper

Study of GaAs-Cs-Sb photoemitter
Author(s): Libin Zhao; Qing Zhou; Shouzhen Zhao; Baoseng Xie
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Paper Abstract

It is well known that the defects of the GaAs-Cs-O photocathode are the poor photoemission stability and short life at room temperature. All these defects are caused by cesium desorption from the photosurface. In this paper, for resolving the problem of cesium desorption, a new surface activation material Cs-Sb is proposed to take the place of Cs-O for reducing the cesium release from the GaAs surface. From the experimental results, the following conclusion may be obtained: using the Cs-Sb to replace the Cs-O covering the GaAs surface, the stable negative-electron-affinity (NEA) photoemitter can be prepared.

Paper Details

Date Published: 1 April 1993
PDF: 5 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142006
Show Author Affiliations
Libin Zhao, Nankai Univ. (China)
Qing Zhou, Nankai Univ. (China)
Shouzhen Zhao, Nankai Univ. (China)
Baoseng Xie, Nankai Univ. (China)

Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93
LiWei Zhou, Editor(s)

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